BSP613PH6327XTSA1 P-Channel 60V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
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6.433 In Stock
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All prices are in EUR.
Price Break Unit Price Extended Price
1 1,18000 €1,18
10 1,05300 €10,53
25 1,00000 €25,00
100 0,82120 €82,12
500 0,67838 €339,19

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Alternate Package
  • Tape & Reel (TR)  : BSP613PH6327XTSA1TR-ND
  • Minimum Quantity: 1.000
  • Quantity Available: 5.000 - Immediate
  • Unit Price: € 0,59507

BSP613PH6327XTSA1

Datasheet
Digi-Key Part Number BSP613PH6327XTSA1CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number BSP613PH6327XTSA1
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Description MOSFET P-CH 60V 2.9A SOT223-4
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Detailed Description

P-Channel 60V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

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Customer Reference
Documents & Media
Datasheets BSP613P
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Plating Supplier/Wafer Site Add 14/Feb/2017
PCN Packaging Mult Dev Cover Tape Chg 9/Mar/2020
Mult Dev Pkg Update 28/May/2020
HTML Datasheet BSP613P
Simulation Models MOSFET OptiMOS™ 60V P-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series SIPMOS®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 875pF @ 25V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
Base Part Number BSP613
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names BSP613PH6327XTSA1CT