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SI3473CDV-T1-GE3 P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Price & Procurement
22.294 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,62000 € 0,62
10 0,53900 € 5,39
25 0,50680 € 12,67
100 0,36780 € 36,78
250 0,35476 € 88,69
500 0,30734 € 153,67
1.000 0,26156 € 261,56

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI3473CDV-T1-GE3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 21.000 - Immediate
  • Unit Price: € 0,24521
  • Digi-Reel®  : SI3473CDV-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 22.294 - Immediate
  • Unit Price: Digi-Reel®

SI3473CDV-T1-GE3

Datasheet
Digi-Key Part Number SI3473CDV-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI3473CDV-T1-GE3
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Description MOSFET P-CH 12V 8A 6-TSOP
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

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Documents & Media
Datasheets SI3473CDV
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI3473CDV
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 22mOhm @ 8.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2010pF @ 6V
FET Feature -
Power Dissipation (Max) 2W (Ta), 4.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
Base Part Number SI3473
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names SI3473CDV-T1-GE3CT