Name: G2R120MT33J
Brand: Navitas Semiconductor, Inc.
SKU: 1913-G2R120MT33J-ND
Price: 94.55042 EUR
Availability: OutOfStock

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G2R120MT33J
DigiKey Part Number	1913-G2R120MT33J-ND
Manufacturer	Navitas Semiconductor, Inc.
Manufacturer Product Number	G2R120MT33J
Description	SIC MOSFET N-CH TO263-7
Customer Reference
Detailed Description	N-Channel 3300 V 35A Surface Mount TO-263-7
Datasheet	Datasheet
EDA/CAD Models	G2R120MT33J Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 156mOhm @ 20A, 20V
Mfr Navitas Semiconductor, Inc.	Gate Charge (Qg) (Max) @ Vgs 145 nC @ 20 V
Series G2R™	Vgs (Max) +25V, -10V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 3706 pF @ 1000 V
Part Status Last Time Buy	Operating Temperature -55°C ~ 175°C (TJ)
FET Type N-Channel	Mounting Type Surface Mount
Technology SiCFET (Silicon Carbide)	Supplier Device Package TO-263-7
Drain to Source Voltage (Vdss) 3300 V	Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Current - Continuous Drain (Id) @ 25°C 35A	Base Product Number G2R120
Drive Voltage (Max Rds On, Min Rds On) 20V