Name: HN1C01F-GR(TE85L,F
Brand: Toshiba Semiconductor and Storage
SKU: HN1C01F-GR(TE85LFTR-ND
Price: 0.3267 EUR
Availability: InStock

Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 800MHz 300mW Surface Mount SM6

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

HN1C01F-GR(TE85L,F
DigiKey Part Number	HN1C01F-GR(TE85LFTR-ND - Tape & Reel (TR) HN1C01F-GR(TE85LFCT-ND - Cut Tape (CT) HN1C01F-GR(TE85LFDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	HN1C01F-GR(TE85L,F
Description	TRANS 2NPN DUAL 50V 150MA SM6
Manufacturer Standard Lead Time	52 Weeks
Customer Reference
Detailed Description	Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 800MHz 300mW Surface Mount SM6
Datasheet	Datasheet
EDA/CAD Models	HN1C01F-GR(TE85L,F Models

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Category Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays	DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V
Manufacturer Toshiba Semiconductor and Storage	Power - Max 300mW
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Frequency - Transition 800MHz
Part Status Active	Operating Temperature 125°C (TJ)
Transistor Type 2 NPN (Dual)	Mounting Type Surface Mount
Current - Collector (Ic) (Max) 150mA	Package / Case SC-74, SOT-457
Voltage - Collector Emitter Breakdown (Max) 50V	Supplier Device Package SM6
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA	Base Product Number HN1C01
Current - Collector Cutoff (Max) 100nA (ICBO)