N-Channel 1200 V 20A (Tc) 107W (Tc) Through Hole TO-247
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N-Channel 1200 V 20A (Tc) 107W (Tc) Through Hole TO-247
Toshiba 650 V and 1,200 V 3rd Generation Silicon Carbide MOSFETs | Datasheet Preview

TW140N120C,S1F

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264-TW140N120CS1F-ND
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TW140N120C,S1F
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G3 1200V SIC-MOSFET TO-247 140M
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24 Weeks
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N-Channel 1200 V 20A (Tc) 107W (Tc) Through Hole TO-247
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Vgs(th) (Max) @ Id
5V @ 1mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 18 V
Packaging
Tube
Vgs (Max)
+25V, -10V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
691 pF @ 800 V
FET Type
Power Dissipation (Max)
107W (Tc)
Technology
Operating Temperature
175°C
Drain to Source Voltage (Vdss)
1200 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-247
Drive Voltage (Max Rds On, Min Rds On)
18V
Package / Case
Rds On (Max) @ Id, Vgs
182mOhm @ 10A, 18V
Environmental & Export Classifications
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Additional Resources
In-Stock: 0
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Tube
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1€12.65000€12.65
30€7.69900€230.97
120€6.61450€793.74
510€6.01622€3,068.27
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Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:€12.65000
Unit Price with VAT:€15.30650