What is FRAM? FRAM stands for Ferroelectric Random Access Memory, note there are other acronyms for FRAM used by other companies such as F-RAM or FeRAM. As the "RAM" part of the name already suggests, FRAM behaves similarly to DRAM, it allows random access to each individual bit for both read and write. Unlike EEPROM or Flash memory technology, FRAM does not require a special sequence to write data nor does it require a higher programming voltage. However, FRAM is non-volatile, that is, it does not "lose" its content when power is removed. So why is FRAM non-volatile? This is because of the special dielectric material used in the storage capacitor: a ceramic that allows making use of the so-called ferroelectric effect. The term "ferroelectric" does not mean that the memory contains iron (the chemical element Fe) nor does it imply that the memory can be influenced by magnetic fields. In fact it is immune to magnetic fields. The term results from the hysteresis loop being similar to the magnetic hysteresis loop of iron (Fe). In contrast to the magnetic hysteresis loop, the one in FRAM results from the electrical dipole formed by zirconium (Zr) and oxygen (O) atoms in the ceramic lead-zirconate-titanate crystal (PZT) used to implement FRAM. Some of the many advantages of FRAM are listed here. These advantages are directly in-tune with 430’s core DNA principles of ultra low power and ease of use.