Shown here is a comparison of FRAM, Static RAM, EEPROM and Flash, three of these technologies are non-volatile, SRAM is not. The second row compares write speeds when writing to an arbitrary memory block 13 kB in length. FRAM outpaces both non-volatile technologies easily. Note that the flash write speed accounts for the time taken to erase a segment of flash before writing to it. Pre-erase is not a requirement for FRAM. When it comes to active power the comparison is being made across devices rather than simply memory technologies. The MSP430F5438 device, the lowest active power MSP430 flash device is about twice the power of the MSP430FR57xx device. At 100-110 µA/MHz the FR57xx leads the 16-bit MCU world in terms of lowest active power. With regards to endurance FRAM provides a number, >100 trillion, that is orders of magnitudes higher than what flash or EEPROM can provide. When it comes to bit-wise programmability – FRAM is very similar to static RAM, meaning it can be programmed, read or erased through bit-wise accesses. In comparison flash erases are usually segment-wise while the writes are typically bytes or words in length. A new dimension that FRAM adds is the ability to configure Unified memory. This means that a single block of FRAM can serve as either code, data or constant memory depending on how it is configured. Flash was not the preferred choice for variable memory due to the erase time requirements while SRAM was not preferred for code storage due to its volatile nature. FRAM has the best of both worlds in that it can be used easily for code or data due to its non-volatile nature while supporting fast writes.