FRAM is well known for its high endurance which is measured as the number of write/erase cycles the memory can be subject to. An example of where write/erase requirements are very high is with RFID tags that are increasingly popular as displays in department shelves, name badges and even in industrial automation floors where they serve to mark and identify products passing through a conveyor belt. In such applications, a memory location may be written at the rate of 100 times is a day over many years. The endurance of a single byte of flash is 10,000 write/erase cycles, in comparison a FRAM byte can be written to 1015 times or 100 billion times more than flash. This is virtually unlimited endurance – removing the need for redundant memory segments and increasing the lifetime of a device by many years.