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NTBG030N120M3S Silicon Carbide (SiC) MOSFETs

onsemi's M3S EliteSiC operates seamlessly with 10 V gate bias, ensuring reliable performance and smooth switching cycles

Image of onsemi's NTBG030N120M3S Silicon Carbide (SiC) MOSFETsonsemi’s M3S EliteSiC MOSFET has optimized performance for fast switching applications, maximizing efficiency and minimizing energy loss. These 1200 V SiC MOSFETs guard against electrical storms, delivering unwavering stability and control even in the most demanding environments. The M3S EliteSiC operates seamlessly with a -10 V gate bias, ensuring reliable performance and smooth switching cycles. Its optimized design and low switching losses translate to unmatched efficiency, saving energy and reducing cooling requirements. These MOSFETs offer optimal performance with an 18 V gate drive but also work flawlessly with 15 V, adapting seamlessly to existing systems. The M3S EliteSiC represents the cutting edge of SiC technology, ensuring the users’ designs are ready for the demands of tomorrow.

Features
  • D2PAK-7L package with Kelvin source configuration
  • Excellent FOM (= RDS(ON) * EOSS)
  • Ultra-low gate charge (QG(TOT) = 107 nC)
  • High-speed switching with low capacitance (COSS = 106 pF)
  • 15 V to 18 V gate drive
  • M3S technology: 29 mOhm RDS(ON) with low EON and EOFF losses
  • 100% avalanche tested
  • Halide-free and RoHS compliant
Applications
  • Industrial

NTBG030N120M3S Silicon Carbide (SiC) MOSFETs

AfbeeldingOnderdeelnr. fabrikantBeschrijvingAvailable QuantityPrijsDetails weergeven
SILICON CARBIDE (SIC) MOSFET - ENTBG030N120M3SSILICON CARBIDE (SIC) MOSFET - E1284 - Immediate
24800 - Factory Stock		$10.45Details weergeven
Published: 2024-02-07