Instellingen
Snelle levering
Gratis verzending
Incoterms
Betalingswijzen
Marketplace-product
TP65H SuperGaN™ 650 V 35 mΩ and 240 mΩ FETs
Transphorm’s JEDEC-qualified Gen IV FETs are offered in TO-247 and PQFN packages
Transphorm’s 650 V SuperGaN™ Gen IV FETs include two robust JEDEC-qualified devices. The TP65H035G4WS offers a typical on-resistance of 35 mΩ in a TO-247 package. The TP65H300G4LSG offers a typical on-resistance of 240 mΩ in a PQFN88 package. Power systems using SuperGaN FETs can reach greater than 99% efficiency when used with bridgeless totem-pole power factor correction (PFC). Benefits include an improved figure of merit of ~10%; enhanced inrush current capabilities; and easier designability given switching node snubbers at high operation currents are no longer required.
TP65H SuperGaN™ 650 V 35 mΩ and 240 mΩ FETs
| Afbeelding | Onderdeelnr. fabrikant | Beschrijving | Stroom - continue ontlading (Id) bij 25°C | Rds aan (max.) bij Id, Vgs | Vgs(th) (max.) bij Id | Available Quantity | Prijs | Details weergeven | |
|---|---|---|---|---|---|---|---|---|---|
 |  | TP65H035G4WS | GANFET N-CH 650V 46.5A TO247-3 | 46,5 A (Tc) | 41 mOhm @ 30A, 10V | 4,8V @ 1mA | 406 - Immediate | $16.40 | Details weergeven |
|  | TP65H300G4LSG-TR | GANFET N-CH 650V 6.5A 3PQFN | 6,5 A (Tc) | 312mOhm @ 5A, 8V | 2,6V @ 500µA | 0 - Immediate | See Page for Pricing | Details weergeven |
Published: 2020-07-28
Nederland