Next Generation SiC Schottky Barrier Diodes

Microsemi announces the release of 1200 V, 10 A, and 20 A SiC Schottky barrier diode products with 30 A and 50 A SiC diodes coming soon. With 20% higher avalanche energy/UIS rating versus SiC competitors, high repetitive surge current ruggedness, and inherent SiC efficiency and system cost advantages over Si diodes, Microsemi SiC diodes are ideal for electrification applications like PFC and output rectification in high-voltage HEV/EV charging station modules, onboard chargers, DC-DC converters, energy recovery systems, and switch mode power supplies.

SiC SBD Advantages Over Si Diodes

• Efficiency at higher voltage (>650 V) and higher switching frequency
• Lower forward voltage (V_F) for lower static losses and higher energy efficiency
• Low EMI from nearly no reverse recovery charge (Q_rr) during hard switching
• Stable operation at higher temperature (+175°C)
• System efficiency with over 25% power output increases for same physical dimensions and lower costs (smaller magnetics and filtering, less cooling/heatsink costs, etc.)